The Fabrication and Study of GaAs MOSFET Using Rare-Earth Oxide as Gate Dielectrics
碩士 === 中原大學 === 電子工程研究所 === 90 === The main goal of this thesis is to fabricate GaAs Metal Oxide Semiconductor Field Effect Transistors using rear-earth oxide as gate dielectrics and study the device characteristics. GaAs and related compound material system dominates the applications of modern...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71413065567710080071 |