Characterizations of GaAs layers grown from liquid phase epitaxy
碩士 === 中原大學 === 電子工程研究所 === 90 === To fabricate devices with better electrical and optical characteristics using low ohmic contact resistivity, heavily doped GaAs is required. Germanium is an ideal dopant for LPE because of its low vapor pressure. In this paper, we report on the preparation of high...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36962312061718086188 |