The Material Characteristic Study of InGaN/GaN Multiple Quantum Wells
博士 === 國防大學中正理工學院 === 國防科學研究所 === 90 === The performance of GaN-based light-emitting diodes (LEDs) and laser diodes is strongly affected by the In-rich dots structures. It is possible for the manufactures to tune the wavelength of the laser emission or to tailor the gain spectrum to desired shape by...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52711689991681728168 |