| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 89 === Recently, due to the semiconductor element fabrication technology has developed very rapid in flash memory technology. It has been widely employed in non-volatile semiconductor memories such as: IC card、hand-held Computer、Cameras and so on. The flash memory to act for hard disk drives for data storage must meet the requirement of small size, and low power consumption. For an advanced flash memory, the professor will focus on studying the threshold voltage shift, data retention time, P/E endurance, programming efficiency, erase speed, and so on. The flash memory can obtain higher device reliability, high performance, and integrity.
The ULSI application goes on processing faster and voltage supply is trending lower, the more strictly to the technology of flash memory process. Since flash memory technology base on the localized oxidation isolation method (LOCOS) process technology can meet today's high-density requirement. Because of the conventional LOCOS isolation process has a problem known as “bird's beak encroachment”. Therefore, the scalability of the LOCOS is limited to about the um range. To increase the device integration level, different isolation techniques are required. Therefore, when considering the embedded requirement of future SOC (System On Chip) applications a low power flash cell with STI process module become must be.
In recent years, it has been expected that STI process will improve both density and integration when compare to LOCOS process; but the local high stress electric field on STI edge will result in SILC (Stress Induced Leakage Current), which degrade the characteristics of data retention. In this thesis, we will investigate flash memory characteristics, which include hot carrier related issues, such as oxide damage, write/erase cycles endurance, read disturbance, data retention and so on in self-aligned flash memory cells and improvement.
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