Noise Performance Analysis of Inverted High Electron Mobility Transistors (IHEMTs)
碩士 === 中國文化大學 === 材料科學與製造研究所 === 89 === Abstract A noise model for High Electron Mobility Transistor (HEMT) or Modulation Doped Field Effect Transistor (MODFET) had been presented [37, 38]. The model is based on a self-consistent solution of the Schrödinger and Poisson’s equati...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51806343550547022353 |