An investigation into the non-quasi-static effects in MOS devices

• Main Authors: Yun-hsueh Chuang, 莊昀學
• Other Authors: 張勝良
• Format: Others
• Language: en_US
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/12511446729719546280

碩士 === 國立臺灣科技大學 === 電子工程系 === 89 === The availabiliry of an accurate MOSFET model has become a real issue for efficient design and simulation of high performance analog and digital VLSI circuits in high frequency. In this thesis, a new charge-oriented semi-empirical non-quasi-static(NQS) model is developed for small geometry MOSFET that is computationally efficient to be useful for circuit simulation. The non-quasi-static model is adopted. An approximate inversion charge profile is used to reduce the nonlinear current-continuity equation to an ordinaryu differential equation. The nodel is valid in all regions of operation(weak,moderate and strong inversion) and is derived without resorting to the approximate arbitrary channel charge partitioning. The result form the proposed model are examined and compared with 2D simulation resuls and good agreement is obtained for the transient source, drain and gate currents for large signals applied to the gate.