An investigation into the non-quasi-static effects in MOS devices
碩士 === 國立臺灣科技大學 === 電子工程系 === 89 === The availabiliry of an accurate MOSFET model has become a real issue for efficient design and simulation of high performance analog and digital VLSI circuits in high frequency. In this thesis, a new charge-oriented semi-empirical non-quasi-s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12511446729719546280 |