Surface Reaction Probabilities of Silicon Hydride Radicals in SiH4/H2 CVD Systems
碩士 === 國立臺灣科技大學 === 化學工程系 === 89 === Reactive sticking coefficients (RSC) of silicon hydride radicals are evaluated, between 871 and 913 K (total pressure 3, 5, 6 torr), from simulating the film thickness contours of trenches deposited in SiH4/H2 reaction system. The poly-Si thin films a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85410454419873146268 |