The Synthesis of MOCVD Precursor (hfac)Cu(COD) and the Initial Growth of Copper Thin Films

• Main Authors: Sung Chi Chang, 張松吉
• Other Authors: Chiapyng Lee
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/81018319076126449527

碩士 === 國立臺灣科技大學 === 化學工程系 === 89 === The volatile copper(I) complex (β-diketonate)CuI(COD) whereβ-diketonate = hexafluoroacetylacetonate(hfac), and COD = 1, 5-clcyooctandine has been successfully prepared in high yield. This species has been characterized by H1-NMR and FTIR to ensure its high purity. The thermal stability found by DSC and TGA makes the compound a great precursor for Cu CVD. A highly conductive copper film can be deposited conformally, continuously, nonporously, and purely by the disproportionation reaction of (hfac)CuI(COD) at proper deposition temperature, precursor partial pressure, and deposition time. According to these characters, (hfac)CuI(COD) will be an excellent precursor for Cu seed layer deposition. Without SEM, the nonporous and continuous conditions of Cu thin films can be easily detected by sheet resistance and reflectivity measurements, which provide a noble methodology as the end-point indicator of seed layer deposition.