The Fabrication of Polysilicon Thin Film Transistors by Excimer Laser Annealing and Metal Induced Crystallization
碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === The material properties and device characteristics of polysilicon thin film transistor are investigated. Polysilicon material has been prepared by XeCl excimer laser annealing (ELA), metal induced crystallization (MIC), and metal induced lateral crys...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23876115406024060577 |