Modeling of Partially Depleted SOI MOSFET's
碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === In this thesis, analytical models for partially-depleted SOI MOSFET’s are described. In Chapter 2, by solving the Poisson’s equation, the boundary model for determining if a SOI NMOS device is in PD or FD condition including uniform doped and non-unif...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50206662464746474909 |