Modeling of Off-state Leakage Current in Ultra-thin-gate-oxide Devices

• Main Authors: I-Ren Chen, 陳怡仁
• Other Authors: Professor James B. Kuo
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/35196298406191866819

碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === Abstract With the down-scaling of device dimensions and much thinner gate oxide, the electric field inside a device will exceed beyond a reasonable range. The increased electric field further leads to a rapid growth of the off-state leakage current. This thesis discusses the major two components of the off-state leakage current. In chapter 2, this thesis provides a two-diode approach to model the gate leakage current for ultra-thin-gate-oxide devices. This model can be used to simulate the behavior of the gate leakage current for circuit operation. In chapter 3, this thesis reports the GIDL effects in bulk and SOI devices and presents an analytical model of the GIDL effect for the LDD PD SOI device.