Modeling of Off-state Leakage Current in Ultra-thin-gate-oxide Devices
碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === Abstract With the down-scaling of device dimensions and much thinner gate oxide, the electric field inside a device will exceed beyond a reasonable range. The increased electric field further leads to a rapid growth of the off-state lea...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35196298406191866819 |