Mechanisms and improvement of photoluminescence in InAs1-xNx/InGaAs single quantum wells on InP
碩士 === 國立臺灣大學 === 物理學研究所 === 89 === Abstract Optical properties have been investigated in InAs(N)/InGaAs single quantum wells (SQWs) on InP grown by gas source molecular beam epitaxy.Measurements of temperature dependent photoluminescence, excitation power dependent photolumine...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60717526855437973510 |