| Summary: | 碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 89 === Based on the principle of near-field optics, nanometric near-field optical writing for lithography will be developed in this article. Diffraction limit (about half of the wavelength) of the conventional far-field optics will be no longer limited by the spatial resolution. We will fabricate near-field optical fiber probes with the aperture size between 50 nm and 300 nm to perform the near-field optical writing on photoresist thin film surface. Results of optical writing with nanometric size are obtained. After laser heat the fiber probe, etching fiber probe tip can get the optical fiber probes with the aperture size of about 85nm. In our study, the line width and depth of near-field exposure will be influenced by some parameters during process, such as exposure power, exposure time, development time, and the scale of optical aperture of the optical fiber probe, etc. From the AFM inspection, the full width at half-maximum (FWHM) line width is 128nm and depth is about 17nm can be got in this study. This shows that the near-field optical probe head of the NSOM can be improved.
|
|---|
