| Summary: | 碩士 === 國立臺灣大學 === 化學工程學研究所 === 89 === As feature size is down to the deep submicron region,the performance of integrated circuit devices will be significantly limited by the interconnect delay(i.e. RC delay).Using the material with the lower dielectric constant can be a potential solution to reduce the interconnect capacitance. To synthesis the material with lower dielectric constant, surfactant-templating mesoporous film is a promising process because the film’s ultra-low dielectric constant can be achieved by its inherent porosity with controllable pore size.
It has been successful in our laboratory to synthesize low-dielectric thin films by using mesoporous molecular sieves technology. In this research, the main objective is to investigate the effects of coating solutions（i.e., concentration of water, acid, surfactants and other process factors）on the thin films’ electric and physical characteristics. Among the adopted surfactants, it was found that tween performs best in electrical property. Increasing the amount of tween decreased dielectric constant. For different acid source (i.e., HNO3 and HCl), the results showed that thin film from HCl performs better in dielectric constant, rather with a much larger (10 times) leakage current density. Moreover, it was found that increasing deioned water decreased dielectric constant of thin films. Nevertheless, it resulted in more leakage current. Similarly, increasing the stirring time in coating solution made dielectric constant of the film lower, and it also resulted in more leakage current.
The lowest dielectric constant of film prepared in this research was 1.9.And the leakage current was found to be 6.26e-8 A/cm2 with an applied of 1MV/cm.
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