Study on silicon germanium heterojuction bipolar transistor design for Mixer application
碩士 === 國立清華大學 === 電子工程研究所 === 89 === SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of Ⅲ-Ⅴ HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. In this thesis, we emphasize on the optim...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92738446557903603873 |