A Novel Ballistic-injection AND (BiAND) - Type Flash Memory
碩士 === 國立清華大學 === 電子工程研究所 === 89 === Comparing with stacked gate flash memory, split gate flash memory has the advantage of higher programming gate current and efficiency. However, with a additional select gate, It’s difficult to achieve higher storage density and scale down capability. I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90884652227615718971 |