Novel Seed Layer for Cu Metallization
碩士 === 國立清華大學 === 電子工程研究所 === 89 === Abstract We developed two novel methods of Cu seed layer deposition for ULSI metallization. First, We deposited TaSiX film as a barrier layer on SiO2,and TaSiX was sputtered by Ta target with a half of Si wafer. A mixture solution of hydrofl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42884200809351481074 |