The study of IrO2 formed in bottom electrode and the dielectric properties of BaxSr1-xTiyO3+z
碩士 === 國立清華大學 === 材料科學工程學系 === 89 === The advancement of dynamic random access memories (DRAM''s) has significantly decreased the available area per cell. Electroceramic thin films with high dielectric constant have attracted great attention for practical use in capacitors of gigabit DRAM&...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80735690032164186097 |