Studies and applications of low dielectric mesoporous silica film for ULSI

碩士 === 國立清華大學 === 化學系 === 89 === As IC technology moves into the deep submicrometer regime in high performance ULSI circuits, it is required to decrease the metal pitch and to increase the number of metal layers for interconnect to accommodate the increased packing density and functional complexity....

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Bibliographic Details
Main Authors: An-Chung Cho, 卓恩宗
Other Authors: Kuei-Jung Chao
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/38029961728206587139