Characterization and Fabrication of Recessed Multi-Gate SOI MOSFET
碩士 === 國立中山大學 === 電機工程學系研究所 === 89 === Abstract In this thesis, we propose and fabricate a triple recessed multi-gate SOI device that has high transconductance and low series resistance. The SOI device structure has three unique features. First, it uses mesa isolation instead of using conventi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37815733931416557284 |