Study on the Characteristic of GaSb/GaAs Heterojunction
碩士 === 國立中山大學 === 電機工程學系研究所 === 89 === MBE ( Molecular Beam Epitaxy ) technique can obtain high quality of GaSb/GaAs hetero-junction structure and control epilayers precisely.It has 7﹪lattice mismatch between GaAs ( substrate ) and GaSb ( thin film ), but if we control beam flux ratio (V/III) and s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22505649278444789858 |