Investigation ofδ-dopedⅢ－Ⅴ Semiconductor Quantum Well Using Photoluminescence
碩士 === 國立中山大學 === 物理學系研究所 === 89 === We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in these samples, especially the first and second subband. We have dis...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/41808844573411495257 |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 89 === We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in these samples, especially the first and second subband. We have discovered that the sample ( AlAs0.56Sb0.44/Ga0.47In0.53As ) has three subband by SdH and electron density will increase with illumination time. Although we did not observe the intersubband transition in the experiment, we did know the performance and controls about TRIAX320 monochrometer. It means we could measure the better result in further.
|
|---|