Investigation ofδ-dopedⅢ－Ⅴ Semiconductor Quantum Well Using Photoluminescence
碩士 === 國立中山大學 === 物理學系研究所 === 89 === We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in these samples, especially the first and second subband. We have dis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41808844573411495257 |