Electrical Properties of Si-implanted GaN
碩士 === 國立中央大學 === 物理研究所 === 89 === In this thesis, we focus our efforts on the Silicon ion implantation in GaN, activation of Mg-doped GaN, Hall measurement and fabrication of GaN n＋-p junction. In addition, the device processing technologies were also paid attention to investigate the lo...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11988369318526268737 |