Characterization, Analysis, and Parameter Extraction of Flash Memories

• Main Authors: Wen-Shain Hsieh, 謝文獻
• Other Authors: Ming-Jer Chen
• Format: Others
• Language: en_US
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/19059913940009395990

碩士 === 國立交通大學 === 電子工程系 === 89 === A series of programming and erase characterizations on a flash memory cell are carried out for various bias conditions. They include primarily: (i) the drain current versus drain voltage, showing a dramatic drop in drain current at the onset of significant channel hot electron injection; (ii) threshold voltage versus programming time, showing the impact of pinch-off point disappearance; and (iii) threshold voltage versus erase time, exhibiting the situation that F - N tunneling for erase is accompanied simultaneously by generating depletion region in the floating gate. To remove the latter degradation, a soft programming scheme is built for different biases and can provide design guideline as function of drain and control gate voltage. Also performed are addressing the control gate and source disturbs effect, extracting coupling ratios, and highlighting F - N burst tunneling for fast programming.