Characterization, Analysis, and Parameter Extraction of Flash Memories
碩士 === 國立交通大學 === 電子工程系 === 89 === A series of programming and erase characterizations on a flash memory cell are carried out for various bias conditions. They include primarily: (i) the drain current versus drain voltage, showing a dramatic drop in drain current at the onset of significant channel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19059913940009395990 |