Fabrication and Characterization of InAs/GaAs/AlGaAs Heterostructure Q.D. Laser

• Main Authors: Zheng-Ting Chen, 陳政廷
• Other Authors: Chien-Ping Lee
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/97437058085799124369

碩士 === 國立交通大學 === 電子工程系 === 89 === We have successfully fabricated the InAs/GaAs/AlGaAs heterostructure Q.D. lasers with ground state lasing . Comparing with Quantum well lasers , it has smaller threshold current density and higher characteristic temperature . In suitable epitaxy condition , We can make a small size , cheap , low power consuming , low driving current , low temperature dependence and good reliability communication light emitting device with 1.3um . In the experiment , We have developed a new process with insulating oxidation layers that sandwiching the active layer . This process is suitable for small width semiconductor laser in confining current path by the depth of oxidation layers . Usually the smaller width stripe laser , it has the worse current distribution. The bad situation can be greatly improved by the oxidation process .