Fabrication and Characterization of InAs/GaAs/AlGaAs Heterostructure Q.D. Laser
碩士 === 國立交通大學 === 電子工程系 === 89 === We have successfully fabricated the InAs/GaAs/AlGaAs heterostructure Q.D. lasers with ground state lasing . Comparing with Quantum well lasers , it has smaller threshold current density and higher characteristic temperature . In suitable epitaxy condition , We can...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97437058085799124369 |