| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 89 === We have successfully fabricated the InAs/GaAs/AlGaAs heterostructure Q.D. lasers with ground state lasing . Comparing with Quantum well lasers , it has smaller threshold current density and higher characteristic temperature . In suitable epitaxy condition , We can make a small size , cheap , low power consuming , low driving current , low temperature dependence and good reliability communication light emitting device with 1.3um .
In the experiment , We have developed a new process with insulating oxidation layers that sandwiching the active layer . This process is suitable for small width semiconductor laser in confining current path by the depth of oxidation layers . Usually the smaller width stripe laser , it has the worse current distribution. The bad situation can be greatly improved by the oxidation process .
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