Post Exposure Delay Effect and Novel Focus Measurement Pattern for the Application in Deep Ultraviolet Lithography
博士 === 國立交通大學 === 電子工程系 === 89 === The lithographic technology faces a challenge when the semiconductor moves into the submicron or deep-submicron era. The principal issue is the exposure wavelength should be lower to quarter-micron or even smaller, i.e., the conventional halogen lamp sho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50085256006036360263 |