The Study of Low-Temperature Poly-Si TFT''s
碩士 === 國立交通大學 === 電子工程系 === 89 === We have proposed both electron beam annealing and Ni-salicidation techniques to improve the performance of low-temperature poly-Si TFT''s. For E-beam annealing, it is performed at room substrate temperature and only takes several minutes. Compa...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/86266059176487431586 |