Diffusion barrier layer properties of TiW and TiWNthin films in copper metallization system
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === Abstract Copper has attracted a lot of attention as a promising interconnect material in the fabrication of deep sumbmicro devices of ultra-large scale integration circuit devices due to its lower resistivity and better properties than con...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74183486703056675382 |