The Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN

• Main Authors: Jian-Sang Wong, 黃建生
• Other Authors: Edward Y. Chang
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/36694481373790012698

碩士 === 國立交通大學 === 材料科學與工程系 === 89 === A comprehensive study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-type GaN has been made. Both TiWNx and WNx film were deposited by reactive dc sputtering method, the electrical and physical characteristics of the Schottky contact were investigated as a function of annealing temperature. The TiWNx Schottky contact was only thermally stable up to 650℃, the values of ideality factor and barrier height after 650℃ annealing were about 1.14 and 0.76 eV respectively. The Schottky diode characteristics degraded after 750℃ and 850℃ annealing due to interdiffusion between TiWNx and GaN, as indicated by SIMS analysis. The WNx Schottky contact exhibited excellent electrical characteristic even after 850℃ annealing. The ideality factor and the barrier height remained 1.09 and 0.80 eV respectively after 850℃ annealing. Experimental results of this work indicated that WNx is a better Schottky contact material for n-type GaN.