The Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === A comprehensive study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-type GaN has been made. Both TiWNx and WNx film were deposited by reactive dc sputtering method, the electrical and physical characteristics of the Schottky...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36694481373790012698 |
| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系 === 89 === A comprehensive study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-type GaN has been made. Both TiWNx and WNx film were deposited by reactive dc sputtering method, the electrical and physical characteristics of the Schottky contact were investigated as a function of annealing temperature.
The TiWNx Schottky contact was only thermally stable up to 650℃, the values of ideality factor and barrier height after 650℃ annealing were about 1.14 and 0.76 eV respectively. The Schottky diode characteristics degraded after 750℃ and 850℃ annealing due to interdiffusion between TiWNx and GaN, as indicated by SIMS analysis.
The WNx Schottky contact exhibited excellent electrical characteristic even after 850℃ annealing. The ideality factor and the barrier height remained 1.09 and 0.80 eV respectively after 850℃ annealing.
Experimental results of this work indicated that WNx is a better Schottky contact material for n-type GaN.
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