Fabrication of 0.15 μm T-shaped Gate by Electron-beam Lithography for Compound Semiconductor High-speed Device applications
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === A process for fabricating 0.15 μm T-shaped gate using electron-beam lithography has been established. Bi-layer resist system using HI/LO sensitivity resist was used to provide T-shaped resist cavity with undercut profile suitable for lift-off process....
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96368314641475504536 |