| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系 === 89 === In this study, the low k material Benzocyclobutene (BCB) is used as the inter-metal dielectric, and Cu is used as the conducting metal to form the alternative interconnect technology for GaAs MMICs. Technologies of these processes are described in detail in the thesis.
The low k material BCB and copper are integrated to form Cu BCB bridge. The use of copper metal as conducting metal has the advantages of low cost and low sheet resistance, however, W is deposited as barrier layer to prevent interdiffusion of Cu and under-layer metals; the H2O2 / HNO3 is used to etch copper thin metal W/Cu and the whole process is compatible with GaAs MMICs process. BCB is also applied to form Au BCB bridge and compare with Cu BCB bridge. The sheet resistance of the electroplated Cu is 4.6 ~ 5.6 mΩ/□ which is lower than that of electroplated Au which is 14.1 ~ 16.0 mΩ/□.
In this work, physical structures of Au airbridge, Au BCB bridge, and Cu BCB bridge are developed and ready for process integration with GaAs MMICs.
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