Liquid Phase Deposited SiO2 on GaN and Its Application to MOSFET
碩士 === 國立成功大學 === 電機工程學系 === 89 === In this dissertation, we have demonstrated an efficient and low cost approach to deposit oxide layers by liquid phase deposited silicon oxide (LPD) at low temperature (40℃). The oxidation system is quite simple. GaN wafers are only immersed into a H2SiF...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78553210133359852884 |