The Effect of LOCOS Isolation and Shallow Trench Isolation on the Gate Oxide Integrity and The Impact of MOSFET with and without S/D Junctions on the C/V Measuring of Ultra Thin Gate Oxide
碩士 === 國立成功大學 === 電機工程學系 === 89 === The Effect of LOCOS Isolation and Shallow Trench Isolation on the Gate Oxide Integrity In the part of this thesis, the effect of LOCOS isolation and STI (shallow trench isolation) on the gate oxide integrity is investigated. In LOCOS process,...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2001
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Online Access: | http://ndltd.ncl.edu.tw/handle/84612879648625447490 |