The Effect of LOCOS Isolation and Shallow Trench Isolation on the Gate Oxide Integrity and The Impact of MOSFET with and without S/D Junctions on the C/V Measuring of Ultra Thin Gate Oxide

碩士 === 國立成功大學 === 電機工程學系 === 89 === The Effect of LOCOS Isolation and Shallow Trench Isolation on the Gate Oxide Integrity In the part of this thesis, the effect of LOCOS isolation and STI (shallow trench isolation) on the gate oxide integrity is investigated. In LOCOS process,...

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Bibliographic Details
Main Authors: F. C. Tsao, 曹峰誠
Other Authors: Y. K. Fang
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/84612879648625447490