Investigation of GaAs- and InP-Based Heterojunction Bipolar Transistors and Schottky Diode Hydrogen Sensors
博士 === 國立成功大學 === 電機工程學系 === 89 === Heterojunction bipolar transistors (HBT’s) based on III-V compound semiconductor material systems have many prospects in digital and microwave applications due to the excellent high-speed performances combined with high current driving capability. In th...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20517581385455318918 |