Design and Fabrication of SiGe Complementary MOS Transistor
碩士 === 義守大學 === 電子工程學系 === 89 === In this thesis, we explore the application of Si/SiGe heterostructres for CMOS transistors operation. The design consists of a strained Si1-xGex quantum well (as the hole channel) and a strained Si quantum well (as the electron channel) on relaxed Si1-yGey well. A...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/81796166461680987908 |