Fabricate and Study for Novel Infrared Quantum Dot Light Emitting Diode
碩士 === 華梵大學 === 機電工程研究所 === 89 === In this paper, we have fabricated the InAs / GaAs quantum dot edge light emitting diode peak emmisiom wavelength of 1μm. The temperature dependent of shift is 0.22 nm/K. Broadening is 0.04 nm/K the temperature dependent of full width at half maximum (FW...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10035741251486095021 |