Characterizations of 1.55μm-luminescent-wavelength InGaAsP layers grown from very lightly RE-treated solution
碩士 === 中原大學 === 電子工程研究所 === 89 === In the mid-1970s, the interest in quaternary III-V semiconductor materials began to flourish, particularly in the InGaAsP lattice matched to InP. These materials give independent control of lattice parameter and bandgap (and other material properties)....
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86685149698317744677 |