Characteristics of plasma-induced damage in ICP-RIE for GaN
碩士 === 中原大學 === 電子工程研究所 === 89 === III-nitrides semiconductors attract numerous attentions in the last decade, especially for the optical devices such as blue laser diodes as well as the high frequency, high power and high temperature electronic devices such as high electron mobility tran...
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71680916869369376424 |