| Summary: | 碩士 === 中華大學 === 機械與航太工程研究所 === 89 === The X-ray mask will produce in-plane distortion (IPD) and out-of-plane distortion (OPD) in X-ray lithography and fabrication processes. In this thesis, the finite element modeling and analysis procedures were developed in ANSYS environment to verify the distortion and compare with current analytical solutions. Within 1X proximity printing method, the gap distance between the mask and the wafer is a critical parameter needed somewhat adjustments in the X-ray lithography. Furthermore, the material properties, layered thickness and the types of fabrication also affect the IPD and OPD. The finite element model was used to simulate both IPD of the absorber patterns and OPD of the mask. Amount of IPD and OPD are produced resulting from the membrane stress during the fabrication process, at which the developed models and procedures were used to verify the analytical solutions to extend the engineering applications. From this study, one realize the mechanism of distortion to the X-ray mask during the fabrication process and even eliminate the IPD and OPD through the control and improvement of the fabrication.
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