Modulation Spectroscopy of GaNAs Alloy Semiconducto
碩士 === 國立臺灣科技大學 === 電子工程系 === 88 === The temperature dependence of the near band-edge critical points transitions of GaNxAs1-x (0≤x≤0.023 and x=1) samples has been studied by using piezoreflectance and photoreflectance. For samples with x≤0.0053, both the fundamental band gap transition (E0) and the...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26713776358304302435 |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 88 === The temperature dependence of the near band-edge critical points transitions of GaNxAs1-x (0≤x≤0.023 and x=1) samples has been studied by using piezoreflectance and photoreflectance. For samples with x≤0.0053, both the fundamental band gap transition (E0) and the transition from the spin-orbit split-off valence band (E0+Δ0) are observed. The variation of the band gap for x≤0.023 follows predictions of the dielectric model of Van Vechten and Begstresser. The parameters which describe the temperature dependence of E0(T) and E0+Δ0(T) are determined. The results show that these parameters lie between those of GaAs and GaN.
For samples with x=1, X-ray measurements revealed the crystal structure of GaN/GaAs to be cubic. The energy gap and the parameters which describe the temperature dependence of E0(T) for cubic GaN are found to be lower than that of hexagonal GaN.
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