Modulation Spectroscopy of GaNAs Alloy Semiconducto
碩士 === 國立臺灣科技大學 === 電子工程系 === 88 === The temperature dependence of the near band-edge critical points transitions of GaNxAs1-x (0≤x≤0.023 and x=1) samples has been studied by using piezoreflectance and photoreflectance. For samples with x≤0.0053, both the fundamental band gap transition (E0) and the...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2000
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Online Access: | http://ndltd.ncl.edu.tw/handle/26713776358304302435 |