Growth and Optoelectronic Properties of SiCN Nanorods

• Main Authors: Kuo, Po-Fen, 郭博棻
• Other Authors: Chen, Yang-Fang
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/74131759733476557883

碩士 === 國立臺灣大學 === 物理學研究所 === 88 === We report here a novel two stage method for the growth of one-dimensional single crystal nanorods, which are comprised of Si, C, and N. The first stage involves high-density nucleation on Si substrate by using electron cyclotron resonance plasma-enhanced chemical vapor deposition ( ECRCVD ), while the second stage involves nanorod growth using microwave plasma-enhanced chemical vapor deposition ( MWCVD ) in order to achieve a high growth rate along a preferred orientation. The high-resolution scanning electron microscopic ( HRSEM ) images show that the nanorods are of 1.0-1.5 µm in length and 10-50 nm in diameter with well-faceted hexagonal cross-section. Both electron diffraction and the lattice images indicate that the rods are single crystals with little evidence of defects. The stoichiometry of the crystal was determined by the energy-dispersive x-ray spectrometer ( EDX ) and the results showed a Si, C, N atomic ratio of 2 : 5 : 3 . X-ray diffraction spectroscopy ( XRD ) and x-ray photon spectroscopy ( XPS ) were employed for structural and chemical bonding investigation. Preliminary optical and electronic properties determined by photoluminescence spectroscopy ( PL ), piezo-reflectance spectroscopy ( PzR ) and electron field emission measurement show promising potential for blue-UV opto-electronic and flat panel display applications.