Photoelectorchemistry (PEC) reaction and application of GaN

碩士 === 國立臺灣大學 === 光電工程學研究所 === 88 === In this thesis, photo-enhanced wet etching and oxidation on undoped GaN are investigated . When shone with a UV 254 nm Hg source, oxidation of GaN is found to take place in phosphorus acid (H3PO4) solutions with pH values ranging from 3 to 4; however etching of...

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Bibliographic Details
Main Authors: LIAO. CHING-HSIEN, 廖清賢
Other Authors: L.-H. Peng
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/10823842660949381231